Controlled Doping of Vacancy-Containing Few-Layer MoS2 via Highly Stable Thiol-Based Molecular Chemisorption-Reference-Cited by-同舟云学术

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Controlled Doping of Vacancy-Containing Few-Layer MoS2 via Highly Stable Thiol-Based Molecular Chemisorption

Published:2015-11-04 Issue:12 Volume:9 Page:12115-12123
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Sim Dong Min¹,Kim Mincheol²,Yim Soonmin¹,Choi Min-Jae¹,Choi Jaesuk¹,Yoo Seunghyup²,Jung Yeon Sik¹

Affiliation:

1. Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 305-701, Republic of Korea

2. Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 305-701, Republic of Korea

Funder

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.5b05173

Reference47 articles.

1. First-principles analysis of electron-phonon interactions in graphene

2. Graphene transistors

3. Detailed photocurrent spectroscopy of the semiconducting group VIB transition metal dichalcogenides

4. Atomically ThinMoS2: A New Direct-Gap Semiconductor

5. Bandgap tunability at single-layer molybdenum disulphide grain boundaries

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