Resolving and Tuning Carrier Capture Rates at a Single Silicon Atom Gap State-Reference-Cited by-同舟云学术

Resolving and Tuning Carrier Capture Rates at a Single Silicon Atom Gap State

Author:

Rashidi Mohammad¹²^ORCID,Lloyd Erika¹,Huff Taleana R.¹³^ORCID,Achal Roshan¹³,Taucer Marco¹,Croshaw Jeremiah J.¹,Wolkow Robert A.¹²³

Affiliation:

1. Department of Physics, University of Alberta, Edmonton, Alberta T6G 2J1, Canada

2. National Institute for Nanotechnology, National Research Council of Canada, Edmonton, Alberta T6G 2M9, Canada

3. Quantum Silicon, Inc., Edmonton, Alberta T6G 2M9, Canada

Funder

National Research Council Canada

Natural Sciences and Engineering Research Council of Canada

Alberta Innovates - Technology Futures

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

Reference45 articles.

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