Ultralong 1D Vacancy Channels for Rapid Atomic Migration during 2D Void Formation in Monolayer MoS2-Reference-Cited by-同舟云学术

Ultralong 1D Vacancy Channels for Rapid Atomic Migration during 2D Void Formation in Monolayer MoS2

Published:2018-08-17 Issue:8 Volume:12 Page:7721-7730
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Chen Qu¹,Li Huashan²,Zhou Si¹,Xu Wenshuo¹,Chen Jun¹,Sawada Hidetaka³,Allen Christopher S.¹⁴,Kirkland Angus I.¹⁴,Grossman Jeffrey C.⁵,Warner Jamie H.¹^ORCID

Affiliation:

1. Department of Materials, University of Oxford, 16 Parks Road, Oxford OX1 3PH, United Kingdom

2. Sino-French Institute of Nuclear Engineering and Technology, Sun Yat-Sen University, Tang-Jia-Wan, Zhuhai City, Guangdong 519-082, P.R. China

3. JEOL Ltd., 3-1-2 Musashino, Akishima, Tokyo 196-8558, Japan

4. Electron Physical Sciences Imaging Center, Diamond Light Source Ltd., Didcot, Oxfordshire OX11 0DE, United Kingdom

5. Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States

Funder

Royal Society

H2020 European Research Council

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.8b01610

Reference36 articles.

1. Electronic and magnetic properties of MoS2 nanoribbons with sulfur line vacancy defects

2. Magnetism in multivacancy graphene systems