Indirect to Direct Band Gap Transformation by Surface Engineering in Semiconductor Nanostructures-Reference-Cited by-同舟云学术

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Indirect to Direct Band Gap Transformation by Surface Engineering in Semiconductor Nanostructures

Published:2021-12-07 Issue:12 Volume:15 Page:20181-20191
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Califano Marco¹²^ORCID,Lu Ruiyan³,Zhou Yeke³

Affiliation:

1. Pollard Institute, School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom

2. Bragg Centre for Materials Research, University of Leeds, Leeds LS2 9JT, United Kingdom

3. School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom

Funder

School of Electronic & Electrical Engineering, University of Leeds

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.1c08176

Reference52 articles.

1. Green Luminescence from Solution-grown Junctions in GaP Containing Shallow Donors and Acceptors

2. Green luminescence efficiency in gallium phosphide

3. Optical transitions in the isoelectronically doped semiconductor GaP:N: An evolution from isolated centers, pairs, and clusters to an impurity band

4. Zn-Doped p-Type Gallium Phosphide Nanowire Photocathodes from a Surfactant-Free Solution Synthesis

5. The Preparation and Properties of Vapor-Deposited Epitaxial GaAs[sub 1−x]P[sub x] Using Arsine and Phosphine

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4. A construction of core–shell dual zeolite imidazole skeleton derived composite to facilitate photocarrier separation and distribution of active sites for photocatalytic water oxidation;Journal of Catalysis;2024-01

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