Gate-Switchable Molecular Diffusion on a Graphene Field-Effect Transistor

Author:

Liou Franklin123,Tsai Hsin-Zon12,Goodwin Zachary A. H.45ORCID,Yang Yiming12,Aikawa Andrew S.12,Angeles Brian R. P.1ORCID,Pezzini Sergio6ORCID,Nguyen Luc1,Trishin Sergey1ORCID,Cheng Zhichao7,Zhou Shizhe8,Roberts Paul W.1,Xu Xiaomin7ORCID,Watanabe Kenji9,Taniguchi Takashi10ORCID,Bellani Vittorio11ORCID,Wang Feng123,Lischner Johannes4ORCID,Crommie Michael F.123ORCID

Affiliation:

1. Department of Physics, University of California at Berkeley, Berkeley, California 94720, United States

2. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States

3. Kavli Energy NanoSciences Institute at the University of California at Berkeley, Berkeley, California 94720, United States

4. Department of Materials, Imperial College London, Prince Consort Rd, London SW7 2BB, U.K.

5. John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States

6. NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza San Silvestro 12, Pisa 56127, Italy

7. Tsinghua-Berkeley Shenzhen Institute & Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China

8. School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China

9. Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan

10. Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan

11. Dipartimento di Fisica, Università di Pavia, Pavia 27100, Italy

Funder

Engineering and Physical Sciences Research Council

University of California Berkeley

Ministry of Education, Culture, Sports, Science and Technology

Materials Sciences and Engineering Division

Japan Society for the Promotion of Science

Thomas Young Centre

Publisher

American Chemical Society (ACS)

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