Recessed-Channel WSe2 Field-Effect Transistor via Self-Terminated Doping and Layer-by-Layer Etching
Author:
Affiliation:
1. School of Chemical and Biological Engineering, Korea University, Seoul 02841, South Korea
2. School of Chemical and Biological Engineering, Seoul National University, Seoul 08826, South Korea
Funder
National Research Foundation of Korea
Institute of Civil-Military Technology Cooperation
Publisher
American Chemical Society (ACS)
Subject
General Physics and Astronomy,General Engineering,General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsnano.2c03402
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