Gate-Tunable Reversible Rashba–Edelstein Effect in a Few-Layer Graphene/2H-TaS2 Heterostructure at Room Temperature-Reference-Cited by-同舟云学术

Gate-Tunable Reversible Rashba–Edelstein Effect in a Few-Layer Graphene/2H-TaS2 Heterostructure at Room Temperature

Published:2020-04-08 Issue:5 Volume:14 Page:5251-5259
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Li Lijun¹,Zhang Jin²^ORCID,Myeong Gyuho¹,Shin Wongil¹,Lim Hongsik¹,Kim Boram¹,Kim Seungho¹,Jin Taehyeok¹,Cavill Stuart³,Kim Beom Seo⁴⁵^ORCID,Kim Changyoung⁴⁵,Lischner Johannes²,Ferreira Aires³,Cho Sungjae¹^ORCID

Affiliation:

1. Department of Physics, Korean Advanced Institute of Science and Technology, Daejeon 34141, Korea

2. Departments of Materials and Physics, Imperial College London, London SW7 2AZ, United Kingdom

3. Department of Physics, University of York, York YO10 5DD, United Kingdom

4. Center for Correlated Electron Systems (CCES), Institute for Basic Science (IBS), Seoul 08826, Republic of Korea

5. Department of Physics, Seoul National University, Seoul 08826, Korea

Funder

Royal Society

National Research Foundation of Korea

Institute for Basic Science

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.0c01037

Reference58 articles.

1. Spintronics: Fundamentals and applications

2. Emergent phenomena induced by spin–orbit coupling at surfaces and interfaces

3. Spin Hall effects

4. Graphene spintronics

5. Electronic spin transport and spin precession in single graphene layers at room temperature

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