Highly Tunable Lateral Homojunction Formed in Two-Dimensional Layered CuInP<sub>2</sub>S<sub>6</sub> via In-Plane Ionic Migration-Reference-Cited by-同舟云学术

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Highly Tunable Lateral Homojunction Formed in Two-Dimensional Layered CuInP₂S₆ via In-Plane Ionic Migration

Published:2023-01-12 Issue:2 Volume:17 Page:1239-1246
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Zhu Huanfeng¹²^ORCID,Li Jialin¹,Chen Qiang¹,Tang Wei¹,Fan Xinyi¹,Li Fan¹,Li Linjun¹²^ORCID

Affiliation:

1. State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou310027, China

2. Intelligent Optics & Photonics Research Center, Jiaxing Research Institute Zhejiang University, Jiaxing314000, China

Funder

Ministry of Science and Technology of the People's Republic of China

National Natural Science Foundation of China

Natural Science Foundation of Zhejiang Province

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.2c09280

Reference39 articles.

1. The rise of graphene

2. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

3. Epitaxial growth of a monolayer WSe 2 -MoS 2 lateral p-n junction with an atomically sharp interface

4. Recent Advances in Synthesis and Applications of 2D Junctions

5. Heterointerface effects in the electrointercalation of van der Waals heterostructures

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2. Intrinsic Out‐Of‐Plane and In‐Plane Ferroelectricity in 2D AgCrS₂ with High Curie Temperature;Advanced Materials;2024-08-06

3. Free-standing two-dimensional ferro-ionic memristor;Nature Communications;2024-06-18

4. Atomic-level direct imaging for Cu(Ⅰ) multiple occupations and migration in 2D ferroelectric CuInP2S6;2024-05-31

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