High-Density 3D-Boron Nitride and 3D-Graphene for High-Performance Nano–Thermal Interface Material-Reference-Cited by-同舟云学术

High-Density 3D-Boron Nitride and 3D-Graphene for High-Performance Nano–Thermal Interface Material

Author:

Loeblein Manuela¹²^ORCID,Tsang Siu Hon³,Pawlik Matthieu¹,Phua Eric Jian Rong³,Yong Han²,Zhang Xiao Wu²,Gan Chee Lip³,Teo Edwin Hang Tong

Affiliation:

1. CNRS-International NTU Thales Research Alliance (CINTRA) UMI 3288, Research Techno Plaza, 50 Nanyang Drive, Singapore 637553, Singapore

2. Institute of Microelectronics, Agency for Science, Technology and Research (A*Star), 11 Science Park Road, Singapore 117685, Singapore

3. Temasek Laboratories@NTU, 50 Nanyang Avenue, Singapore 639798, Singapore

Funder

Ministry of Education - Singapore

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

Reference77 articles.

1. http://www.businesswire.com/news/home/20151216005646/en/IDTechEx-Research-More-than-Moore-electronics-packaging, retrieved December 16, 2015.

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