Robust Electronic Structure of Manganite-Buffered Oxide Interfaces with Extreme Mobility Enhancement-Reference-Cited by-同舟云学术

Robust Electronic Structure of Manganite-Buffered Oxide Interfaces with Extreme Mobility Enhancement

Published:2022-03-21 Issue:4 Volume:16 Page:6437-6443
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Li Hang¹²,Gan Yulin³,Husanu Marius-Adrian⁴^ORCID,Dahm Rasmus Tindal¹,Christensen Dennis Valbjørn¹^ORCID,Radovic Milan²,Sun Jirong³,Shi Ming²,Shen Baogen³,Pryds Nini¹^ORCID,Chen Yunzhong³^ORCID

Affiliation:

1. Department of Energy Conversion and Storage, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark

2. Swiss Light Source, Paul Scherrer Institute, 5232 Villigen, PSI, Switzerland

3. Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, 100190 Beijing, China

4. National Institute of Materials Physics, Atomistilor 405A, 077125 Magurele, Romania

Funder

Det Frie Forskningsr?d

Villum Fonden

Unitatea Executiva pentru Finantarea Invatamantului Superior, a Cercetarii, Dezvoltarii si Inovarii

Major State Basic Research Development Program of China

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.2c00609

Reference50 articles.

1. A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface

2. Superconducting Interfaces Between Insulating Oxides

3. Electric field control of the LaAlO3/SrTiO3 interface ground state

4. A universal critical density underlying the physics of electrons at the LaAlO3/SrTiO3 interface

5. Evidence of weak superconductivity at the room-temperature grownLaAlO3/SrTiO3interface

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