Miniaturization of the Superconducting Memory Cell via a Three-Dimensional Nb Nano-superconducting Quantum Interference Device-Reference-Cited by-同舟云学术

Miniaturization of the Superconducting Memory Cell via a Three-Dimensional Nb Nano-superconducting Quantum Interference Device

Published:2020-07-22 Issue:9 Volume:14 Page:11002-11008
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Chen Lei¹²^ORCID,Wu Lili¹²,Wang Yue¹²,Pan Yinping¹³,Zhang Denghui¹²,Zeng Junwen¹,Liu Xiaoyu¹,Ma Linxian¹,Peng Wei¹²,Wang Yihua³,Ren Jie¹²,Wang Zhen¹²⁴

Affiliation:

1. CAS Center for Excellence in Superconducting Electronics (CENSE), State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050, China

2. University of the Chinese Academy of Sciences, Beijing 100049, China

3. Department of Physics and State Key Laboratory of Surface Physics, Fudan University, Shanghai 200438 China

4. School of Physical Science and Technology, Shanghai Tech University, Shanghai 200031, China

Funder

Ministry of Science and Technology of the People's Republic of China

National Natural Science Foundation of China

Chinese Academy of Sciences

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.0c04405

Reference48 articles.

1. Energy-Efficient Superconducting Computing—Power Budgets and Requirements

2. Superconductor digital electronics: Scalability and energy efficiency issues (Review Article)

3. Advanced Fabrication Processes for Superconductor Electronics: Current Status and New Developments

4. Design and Demonstration of an 8-bit Bit-Serial RSFQ Microprocessor: CORE e4

5. Magic Cells and Circuits: New Convergence of Memory and Logic Functions in Superconductor Devices

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