Synthesis of a Selectively Nb-Doped WS<sub>2</sub>–MoS<sub>2</sub> Lateral Heterostructure for a High-Detectivity PN Photodiode-Reference-Cited by-同舟云学术

Synthesis of a Selectively Nb-Doped WS₂–MoS₂ Lateral Heterostructure for a High-Detectivity PN Photodiode

Author:

Vu Van Tu¹²,Phan Thanh Luan¹,Vu Thi Thanh Huong¹,Park Mi Hyang¹,Do Van Dam¹,Bui Viet Quoc³,Kim Kunnyun⁴,Lee Young Hee⁵²^ORCID,Yu Woo Jong¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea

2. Center for Integrated Nanostructure Physics, Institute for Basic Science, Sungkyunkwan University, Suwon 16419, Republic of Korea

3. Department of Chemistry, Sungkyunkwan University, Suwon 16419, Republic of Korea

4. Korea Electronics Technology Institute, Seongnam, 13509, Republic of Korea

5. Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea

Funder

Ministry of Science and ICT, South Korea

National Research Foundation of Korea

Institute for Basic Science

Advanced Facility Center for Quantum Technology

Samsung Research Funding and Incubation Center of Samsung Electronics

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

Reference51 articles.

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