Laser Direct Writing of Sol–Gel-Derived Vacancy-Rich Functional Oxide Semiconductors-Reference-Cited by-同舟云学术

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Laser Direct Writing of Sol–Gel-Derived Vacancy-Rich Functional Oxide Semiconductors

Published:2023-05-22 Issue:11 Volume:17 Page:10033-10040
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Long Jing¹^ORCID,Chen Xi²,Mao Tianli²,Xue Songyan¹,Wang Yingchen¹,Xu Yinuo¹,Pi Wenbo²,Lu Jinbo²,Luo Wei²^ORCID,Xiong Wei¹³^ORCID

Affiliation:

1. Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, People’s Republic of China

2. School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430074, People’s Republic of China

3. Optics Valley Laboratory, Hubei 430074, People’s Republic of China

Funder

Ministry of Science and Technology of the People's Republic of China

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.2c12163

Reference30 articles.

1. The Functionalization of Miniature Energy-Storage Devices

2. High-Yield Functional Molecular Electronic Devices

3. Oxygen vacancies in metal oxides: recent progress towards advanced catalyst design

4. Surface Defects on Natural MoS2

5. Role of Oxygen Vacancies in Nanostructured Metal-Oxide Gas Sensors: A Review

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