Nanoimprint-Assisted Shear Exfoliation (NASE) for Producing Multilayer MoS2 Structures as Field-Effect Transistor Channel Arrays
Author:
Affiliation:
1. Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109, United States
Publisher
American Chemical Society (ACS)
Subject
General Physics and Astronomy,General Engineering,General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsnano.5b01715
Reference43 articles.
1. Single-layer MoS2 transistors
2. Atomically ThinMoS2: A New Direct-Gap Semiconductor
3. Low-temperature photocarrier dynamics in monolayer MoS2
4. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets
5. Integrated Circuits Based on Bilayer MoS2 Transistors
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