Epitaxial Growth of Ultraflat Bismuthene with Large Topological Band Inversion Enabled by Substrate-Orbital-Filtering Effect-Reference-Cited by-同舟云学术

Epitaxial Growth of Ultraflat Bismuthene with Large Topological Band Inversion Enabled by Substrate-Orbital-Filtering Effect

Published:2021-12-17 Issue:1 Volume:16 Page:1436-1443
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Sun Shuo^ORCID,You Jing-Yang^ORCID,Duan Sisheng,Gou Jian,Luo Yong Zheng^ORCID,Lin Weinan¹,Lian Xu^ORCID,Jin Tengyu²^ORCID,Liu Jiawei,Huang Yuli²^ORCID,Wang Yihe²,Wee Andrew T. S.^ORCID,Feng Yuan Ping^ORCID,Shen Lei^ORCID,Zhang Jia Lin³^ORCID,Chen Jingsheng^ORCID,Chen Wei²⁴^ORCID

Affiliation:

1. Department of Physics, Xiamen University, Xiamen 361005, China

2. Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou 350207, China

3. School of Physics, Southeast University, Nanjing 211189, China

4. National University of Singapore (Suzhou) Research Institute, Suzhou 215123, China

Funder

Ministry of Education - Singapore

National Research Foundation Singapore

National Natural Science Foundation of China

Natural Science Foundation of Jiangsu Province

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link