Achieving Ultrafast Hole Transfer at the Monolayer MoS2 and CH3NH3PbI3 Perovskite Interface by Defect Engineering

Author:

Peng Bo12,Yu Guannan3,Zhao Yawen4,Xu Qiang3,Xing Guichuan3,Liu Xinfeng35,Fu Deyi1,Liu Bo1,Tan Jun Rong Sherman1,Tang Wei1,Lu Haipeng2,Xie Jianliang2,Deng Longjiang2,Sum Tze Chien3,Loh Kian Ping1

Affiliation:

1. Department of Chemistry and Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore

2. National Engineering Research Center of Electromagnetic Radiation Control Materials and State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

3. School of Physical & Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore

4. China Academy of Engineering Physics, P.O. Box 919-71, Mianyang, 621900, Sichuan, China

5. CAS Center for Excellence in Nanoscience & CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, China

Funder

Agency for Science, Technology and Research

Ministry of Education of the People's Republic of China

Ministry of Education - Singapore

National Research Foundation-Prime Minister's office, Republic of Singapore

Department of Science and Technology, Ministry of Science and Technology

Nanyang Technological University

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

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