Strain-Energy Release in Bent Semiconductor Nanowires Occurring by Polygonization or Nanocrack Formation-Reference-Cited by-同舟云学术

Strain-Energy Release in Bent Semiconductor Nanowires Occurring by Polygonization or Nanocrack Formation

Published:2019-02-26 Issue:3 Volume:13 Page:3730-3738
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Sun Zhiyuan¹^ORCID,Huang Chunyi¹,Guo Jinglong²,Dong Jason T.¹,Klie Robert F.²,Lauhon Lincoln J.¹^ORCID,Seidman David N.¹³

Affiliation:

1. Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, Illinois 60208-3108, United States

2. Department of Physics, University of Illinois at Chicago, Chicago, Illinois 60607, United States

3. Center for Atom-Probe Tomography (NUCAPT), Northwestern University, 2220 Campus Drive, Evanston, Illinois 60208-3108, United States

Funder

United States-Israel Binational Science Foundation

National Science Foundation

McCormick School of Engineering and Applied Science, Northwestern University

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.9b01231

Reference56 articles.

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3. Cracking the Si Shell Growth in Hexagonal GaP-Si Core–Shell Nanowires

4. The effect of interface-roughness and dislocation scattering on low temperature mobility of 2D electron gas in GaN/AlGaN

5. Screw-dislocation-induced scattering processes and acceptor states in Te

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