Laser-Induced Ultrafast Spin Injection in All-Semiconductor Magnetic CrI<sub>3</sub>/WSe<sub>2</sub> Heterobilayer-Reference-Cited by-同舟云学术

Laser-Induced Ultrafast Spin Injection in All-Semiconductor Magnetic CrI₃/WSe₂ Heterobilayer

Published:2024-04-26 Issue:18 Volume:18 Page:11732-11739
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Guo Yilv¹²^ORCID,Zhang Yehui¹,Liu Qing Long²,Zhou Zhaobo³^ORCID,He Junjie³^ORCID,Yuan Shijun¹^ORCID,Heine Thomas²^ORCID,Wang Jinlan¹⁴^ORCID

Affiliation:

1. Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing 211189, People’s Republic of China

2. Faculty of Chemistry and Food Chemistry, TU Dresden, Dresden 01069, Germany

3. Department of Physical and Macromolecular Chemistry, Faculty of Science, Charles University in Prague, Prague 12843, Czech Republic

4. Suzhou Laboratory, Suzhou 215004, People’s Republic of China

Funder

National Key Research and Development Program of China

Deutsche Forschungsgemeinschaft

Basic Research Program of Jiangsu Province

Alexander von Humboldt-Stiftung

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.3c12926

Reference48 articles.

1. Coherent spin–valley oscillations in silicon

2. Integrated photonic quantum technologies

3. Layered materials as a platform for quantum technologies

4. The quantum technologies roadmap: a European community view

5. Optical charge injection and coherent control of a quantum-dot spin-qubit emitting at telecom wavelengths

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