In Situ Tuning of Magnetization and Magnetoresistance in Fe3O4 Thin Film Achieved with All-Solid-State Redox Device-Reference-Cited by-同舟云学术

In Situ Tuning of Magnetization and Magnetoresistance in Fe3O4 Thin Film Achieved with All-Solid-State Redox Device

Published:2016-01-05 Issue:1 Volume:10 Page:1655-1661
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Tsuchiya Takashi¹²,Terabe Kazuya¹,Ochi Masanori²,Higuchi Tohru²,Osada Minoru¹,Yamashita Yoshiyuki¹,Ueda Shigenori³⁴,Aono Masakazu¹

Affiliation:

1. International Center for Materials Nanoarchitechtonics (WPI-MANA), National Institute for Materials Science (NIMS),1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

2. Department of Applied Physics, Faculty of Science, Tokyo University of Science, 6-3-1, Niijuku, Katsushika-ku, Tokyo 125-8585, Japan

3. Quantum Beam Unit, National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan

4. Synchrotron X-ray Station at SPring-8, National Institute for Materials Science, 1-1-1 Kouto, Sayo, Hyogo 679-5148, Japan

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.5b07374

Reference39 articles.

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4. Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers

5. Electrical properties of MgO insulating layers in spin-dependent tunneling junctions using Fe[sub 3]O[sub 4]

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