Sub-Band Filling, Mott-like Transitions, and Ion Size Effects in C60 Single Crystal Electric Double Layer Transistors
Author:
Affiliation:
1. State Key Laboratory of Crystal Materials, Shandong University, 250100, Jinan, Shandong, People’s Republic of China
2. Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455, United States
Funder
Government of Shandong Province
Division of Electrical, Communications and Cyber Systems
Shandong University
National Natural Science Foundation of China
Division of Materials Research
Publisher
American Chemical Society (ACS)
Subject
General Physics and Astronomy,General Engineering,General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsnano.2c00222
Reference63 articles.
1. Highly crystalline 2D superconductors
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5. Electrically Induced Ferromagnetism at Room Temperature in Cobalt-Doped Titanium Dioxide
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