P–N Junction Diode Using Plasma Boron-Doped Black Phosphorus for High-Performance Photovoltaic Devices-Reference-Cited by-同舟云学术

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P–N Junction Diode Using Plasma Boron-Doped Black Phosphorus for High-Performance Photovoltaic Devices

Published:2019-02-14 Issue: Volume: Page:
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Kim Dae-Kyoung¹^ORCID,Hong Seok-Bo¹,Jeong Kwangsik¹,Lee Changmin²,Kim Hyoungsub²³^ORCID,Cho Mann-Ho¹^ORCID

Affiliation:

1. Department of Physics, Yonsei University, Seoul 03722, Republic of Korea

2. School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea

3. Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea

Funder

Yonsei University

Samsung

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.8b07730

Reference50 articles.

1. Photodetectors based on graphene, other two-dimensional materials and hybrid systems

2. Electronics based on two-dimensional materials

3. Large and Tunable Photothermoelectric Effect in Single-Layer MoS2

4. Origin of then-type andp-type conductivity of MoS2monolayers on a SiO2substrate

5. MoS2 P-type Transistors and Diodes Enabled by High Work Function MoOx Contacts

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3. Assessment of thermo-mechanical phenomena in Si-based diodes via operando confocal Raman microscopy;Measurement;2024-04

4. Recent advances in ambient-stable black phosphorus materials for artificial catalytic nitrogen cycle in environment and energy;Environmental Pollution;2024-03

5. Structurally oriented black phosphorus/MXene heterostructured fibers for flexible supercapacitors with enhanced ion transport and capacitive charge storage;Journal of Materials Chemistry A;2024

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