Quantum Emitter Localization in Layer-Engineered Hexagonal Boron Nitride-Reference-Cited by-同舟云学术

Quantum Emitter Localization in Layer-Engineered Hexagonal Boron Nitride

Published:2021-08-04 Issue:8 Volume:15 Page:13591-13603
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Stewart James Callum¹,Fan Ye¹,Danial John S. H.²,Goetz Alexander³,Prasad Adarsh S.³,Burton Oliver J.¹,Alexander-Webber Jack A.¹^ORCID,Lee Steven F.²^ORCID,Skoff Sarah M.³,Babenko Vitaliy¹,Hofmann Stephan¹^ORCID

Affiliation:

1. Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, United Kingdom

2. The Yusuf Hamied Department of Chemistry, University of Cambridge, Lensfield Road, Cambridge CB2 1EW, United Kingdom

3. Institute of Atomic and Subatomic Physics, Vienna University of Technology, Stadionallee 2, 1020 Vienna, Austria

Funder

Engineering and Physical Sciences Research Council

Royal Society

Austrian Academy of Sciences

King's College Cambridge, University of Cambridge

H2020 Future and Emerging Technologies

H2020 European Institute of Innovation and Technology

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.1c04467

Reference105 articles.

1. Hexagonal boron nitride is an indirect bandgap semiconductor

2. Thermal Conductivity and Phonon Transport in Suspended Few-Layer Hexagonal Boron Nitride

3. Strong Oxidation Resistance of Atomically Thin Boron Nitride Nanosheets

4. Corrosion resistance of monolayer hexagonal boron nitride on copper

5. Quantum emission from hexagonal boron nitride monolayers

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