Ultrahigh Photogain Short-Wave Infrared Detectors Enabled by Integrating Graphene and Hyperdoped Silicon

Author:

Jiang Hao12ORCID,Wang Mao3,Fu Jintao14,Li Zhancheng1ORCID,Shaikh Mohd Saif3,Li YunJie56,Nie Changbin14,Sun Feiying1,Tang Linlong1,Yang Jun1ORCID,Qin Tianshi7,Zhou Dahua1,Shen Jun1ORCID,Sun Jiuxun2,Feng Shuanglong1ORCID,Zhu Meng8,Kentsch Ulrich3,Zhou Shengqiang3ORCID,Shi Haofei1,Wei Xingzhan14ORCID

Affiliation:

1. Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, China

2. School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China

3. Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstraße 400, 01328 Dresden, Germany

4. University of Chinese Academy of Sciences, Beijing 100049, P. R. China

5. Chongqing University of Posts and Telecommunications, Chongqing 400065, China

6. Chongqing School, University of Chinese Academy of Sciences, Chongqing 400714, China

7. Key Laboratory of Flexible Electronics and Institute of Advanced Materials, Nanjing Tech University, Nanjing 210009, China

8. TianJin Jinhang Insitute of Technical Physics, Tianjin 300192, China

Funder

Ministry of Science and Technology of the People's Republic of China

Natural Science Foundation of Chongqing

Deutsche Forschungsgemeinschaft

Chongqing Talents Innovation and Entrepreneur Leaders Project

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

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