Weakly Trapped, Charged, and Free Excitons in Single-Layer MoS2 in the Presence of Defects, Strain, and Charged Impurities-Reference-Cited by-同舟云学术

Weakly Trapped, Charged, and Free Excitons in Single-Layer MoS2 in the Presence of Defects, Strain, and Charged Impurities

Published:2017-10-18 Issue:11 Volume:11 Page:11206-11216
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Dubey Sudipta¹,Lisi Simone¹,Nayak Goutham¹,Herziger Felix¹,Nguyen Van-Dung¹,Le Quang Toai¹,Cherkez Vladimir¹,González César²³,Dappe Yannick J.²,Watanabe Kenji⁴,Taniguchi Takashi⁴,Magaud Laurence¹,Mallet Pierre¹,Veuillen Jean-Yves¹,Arenal Raul⁵⁶^ORCID,Marty Laëtitia¹,Renard Julien¹,Bendiab Nedjma¹,Coraux Johann¹^ORCID,Bouchiat Vincent¹

Affiliation:

1. Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, 38000 Grenoble, France

2. SPEC, CEA, CNRS, Université Paris-Saclay, CEA Saclay, 91191 Gif-sur-Yvette Cedex, France

3. Departamento de Física Teórica de la Materia Condensada and Condensed Matter Physics Center (IFIMAC), Facultad de Ciencias, Universidad Autonoma de Madrid, E-28049 Madrid, Spain

4. National Institute for Materials Science, Tsukuba, 305-0044, Japan

5. Laboratorio de Microscopiías Avanzadas, Instituto de Nanociencia de Aragón, Universidad de Zaragoza, 50018 Zaragoza, Spain

6. ARAID Foundation, 50018 Zaragoza, Spain

Funder

Agence Nationale de la Recherche

Indo-French Centre for the Promotion of Advanced Research

European Regional Development Fund

Ministerio de Econom?a y Competitividad

H2020 Future and Emerging Technologies

European Social Fund

Mar?a de Maeztu Program for Units of Excellence in R&D

Diputaci?n General de Arag?n