Substituent-Controlled Reversible Switching of Charge Injection Barrier Heights at Metal/Organic Semiconductor Contacts Modified with Disordered Molecular Monolayers-Reference-Cited by-同舟云学术

Substituent-Controlled Reversible Switching of Charge Injection Barrier Heights at Metal/Organic Semiconductor Contacts Modified with Disordered Molecular Monolayers

Published:2015-07-14 Issue:7 Volume:9 Page:7429-7439
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Nouchi Ryo¹,Tanimoto Takaaki¹

Affiliation:

1. Nanoscience and Nanotechnology Research Center, Osaka Prefecture University, Sakai 599-8570, Japan

Funder

Ministry of Education, Culture, Sports, Science, and Technology

Murata Science Foundation

Japan Society for the Promotion of Science

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.5b02473

Reference46 articles.

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3. Organic Semiconductors for Solution-Processable Field-Effect Transistors (OFETs)

4. Inkjet printing of single-crystal films

5. Ultrathin Organic Films Grown by Organic Molecular Beam Deposition and Related Techniques

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