Mesoscale Confinement Effects and Emergent Quantum Interference in Titania Antidot Thin Films-Reference-Cited by-同舟云学术

Mesoscale Confinement Effects and Emergent Quantum Interference in Titania Antidot Thin Films

Published:2021-07-19 Issue:8 Volume:15 Page:12935-12944
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Barrows Frank¹²^ORCID,Arava Hanu¹³,Zhou Chun⁴,Nealey Paul¹⁴^ORCID,Segal-Peretz Tamar⁵^ORCID,Liu Yuzi⁶^ORCID,Bakaul Saidur¹,Phatak Charudatta¹³^ORCID,Petford-Long Amanda¹⁷

Affiliation:

1. Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, United States

2. Program of Applied Physics, Northwestern University, Evanston, Illinois 60208, United States

3. Northwestern-Argonne Institute for Science and Engineering (NAISE), Northwestern University, Evanston, Illinois 60208, United States

4. Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States

5. The Wolfson Department of Chemical Engineering, Technion − Israel Institute of Technology, Haifa 3200003, Israel

6. Center for Nanoscale Materials, Argonne National Laboratory, Argonne, Illinois 60439, United States

7. Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States

Funder

Basic Energy Sciences

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.1c01340

Reference53 articles.

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3. Leon, C.; Santamaria, J. In Epitaxial Growth of Complex Metal Oxides; Koster, G., Huijben, M., Rijnders, G., Eds. Woodhead Publishing Series in Electronic and Optical Materials; Woodhead Publishing: Cambridge, U.K., 2015; pp 209–229.

4. Progress in non-volatile memory devices based on nanostructured materials and nanofabrication

5. Resistive switching and impedance characteristics of M/TiO2−x/TiO2/M nano-ionic memristor

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