Time-Dependent Screening Explains the Ultrafast Excitonic Signal Rise in 2D Semiconductors-Reference-Cited by-同舟云学术

Time-Dependent Screening Explains the Ultrafast Excitonic Signal Rise in 2D Semiconductors

Published:2020-12-31 Issue:1 Volume:15 Page:1179-1185
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Smejkal Valerie¹^ORCID,Libisch Florian¹^ORCID,Molina-Sanchez Alejandro²^ORCID,Trovatello Chiara³^ORCID,Wirtz Ludger⁴,Marini Andrea⁵^ORCID

Affiliation:

1. Vienna University of Technology, Institute for Theoretical Physics, 1040 Vienna, Austria

2. Institute of Materials Science (ICMUV), University of Valencia, 46071 Valencia, Spain

3. Department of Physics, Politecnico di Milano, P. Leonardo da Vinci 32, 20133 Milan, Italy

4. Department of Physics and Materials Science, University of Luxembourg, 1511 Luxembourg, Luxembourg

5. CNR-ISM, Division of Ultrafast Processes in Materials (FLASHit), Area della Ricerca di Roma 1, Via Salaria Km 29.3, I-00016 Monterotondo, Scalo, Italy

Funder

Ministerio de Econom?a y Competitividad

Technische Universit?t Wien

International Max Planck Research School for Advanced Methods in Process and Systems Engineering

H2020 Research Infrastructures

Fond National de Recherche, Luxembourg

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.0c08173

Reference45 articles.

1. Valley Zeeman effect in elementary optical excitations of monolayer WSe2

2. Optical and Excitonic Properties of Atomically Thin Transition-Metal Dichalcogenides

3. Exciton physics and device application of two-dimensional transition metal dichalcogenide semiconductors

4. Emerging Photoluminescence in Monolayer MoS2

5. Atomically ThinMoS2: A New Direct-Gap Semiconductor

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