Electrical Properties of Synthesized Large-Area MoS2 Field-Effect Transistors Fabricated with Inkjet-Printed Contacts-Reference-Cited by-同舟云学术

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Electrical Properties of Synthesized Large-Area MoS2 Field-Effect Transistors Fabricated with Inkjet-Printed Contacts

Published:2016-02-01 Issue:2 Volume:10 Page:2819-2826
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Kim Tae-Young¹,Amani Matin²³,Ahn Geun Ho²,Song Younggul¹,Javey Ali²³,Chung Seungjun²,Lee Takhee¹

Affiliation:

1. Department of Physics and Astronomy and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea

2. Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, United States

3. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States

Funder

Basic Energy Sciences

Ministry of Science, ICT and Future Planning

LG Corporation

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.5b07942

Reference55 articles.

1. Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides

2. Electronics based on two-dimensional materials

3. Monolayer semiconductor nanocavity lasers with ultralow thresholds

4. Two-dimensional transition metal dichalcogenides as atomically thin semiconductors: opportunities and challenges

5. Single-layer MoS2 transistors

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1. Inkjet-Printed, High-Performance MoS₂ Transistors and Unipolar Logic Electronics;ACS Applied Materials & Interfaces;2024-07-31

2. Dipole doping effect in MoS2 field effect transistors based on phase transition of ferroelectric polymer dopant;Frontiers in Materials;2023-04-04

3. Novel electrodes and gate dielectrics for field‐effect transistors based on two‐dimensional materials;Bulletin of the Korean Chemical Society;2023-03

4. Laser‐Induced Phase Transition and Patterning of hBN‐Encapsulated MoTe₂;Small;2023-01-24

5. Stacked printed MoS2 and Ag electrodes using electrohydrodynamic jet printing for thin-film transistors;Scientific Reports;2022-12-28

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