Controlled Quantum Dot Formation in Atomically Engineered Graphene Nanoribbon Field-Effect Transistors-Reference-Cited by-同舟云学术

Controlled Quantum Dot Formation in Atomically Engineered Graphene Nanoribbon Field-Effect Transistors

Published:2020-03-30 Issue:5 Volume:14 Page:5754-5762
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

El Abbassi Maria¹²³^ORCID,Perrin Mickael L.¹^ORCID,Barin Gabriela Borin¹^ORCID,Sangtarash Sara⁴⁵,Overbeck Jan¹²^ORCID,Braun Oliver¹²^ORCID,Lambert Colin J.⁴^ORCID,Sun Qiang¹^ORCID,Prechtl Thorsten⁶,Narita Akimitsu⁶^ORCID,Müllen Klaus⁶^ORCID,Ruffieux Pascal¹^ORCID,Sadeghi Hatef⁴⁵^ORCID,Fasel Roman¹⁷^ORCID,Calame Michel¹²⁸^ORCID

Affiliation:

1. Empa, Swiss Federal Laboratories for Materials Science and Technology, CH-8600 Dübendorf, Switzerland

2. Department of Physics, University of Basel, CH-4056 Basel, Switzerland

3. Kavli Institute of Nanoscience, Delft University of Technology, 2628 CJ Delft, The Netherlands

4. Department of Physics, Lancaster University, Lancaster LA1 4YB, United Kingdom

5. School of Engineering, University of Warwick, Coventry CV4 7AL, United Kingdom

6. Max Planck Institute for Polymer Research, 55128 Mainz, Germany

7. Department of Chemistry and Biochemistry, University of Bern, CH-3012 Bern, Switzerland

8. Swiss Nanoscience Institute, University of Basel, CH-4056 Basel, Switzerland

Funder

Engineering and Physical Sciences Research Council

UK Research and Innovation