Anti-MoS2 Nanostructures: Tl2S and Its Electrochemical and Electronic Properties-Reference-Cited by-同舟云学术

Anti-MoS2 Nanostructures: Tl2S and Its Electrochemical and Electronic Properties

Published:2015-12-01 Issue:1 Volume:10 Page:112-123
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Chia Xinyi¹,Ambrosi Adriano¹,Sofer Zdeněk²,Luxa Jan²,Sedmidubský David²,Pumera Martin¹

Affiliation:

1. Division of Chemistry & Biological Chemistry, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore

2. Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technicka 5, 166 28, Prague 6, Czech Republic

Funder

Ministry of Education - Singapore

Ministerstva Školství, Mládeže A Telovýchovy

Czech Science Foundation

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.5b05157

Reference57 articles.

1. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets

2. Two-dimensional transition metal dichalcogenide nanosheet-based composites

3. Layered transition metal dichalcogenides for electrochemical energy generation and storage

4. Low-thermal-conductivity group 13 chalcogenides as high-efficiency thermoelectric materials

5. Electrochemistry of Metal Chalcogenides

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