Bias-Voltage Driven Switching of the Charge-Density-Wave and Normal Metallic Phases in 1T-TaS2 Thin-Film Devices
Author:
Affiliation:
1. Center for Terahertz Research and Applications (CENTERA), Institute of High-Pressure Physics, Polish Academy of Sciences, Warsaw 01-142, Poland
2. Department of Chemistry, University of Georgia, Athens, Georgia 30602, United States
Funder
Division of Emerging Frontiers in Research and Innovation
UC - National Laboratory Collaborative Research and Training Program- University of California Research Initiatives
Publisher
American Chemical Society (ACS)
Subject
General Physics and Astronomy,General Engineering,General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsnano.9b02870
Reference68 articles.
1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
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3. Phase-change materials for rewriteable data storage
4. From Mott state to superconductivity in 1T-TaS2
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