Thermal History-Dependent Current Relaxation in hBN/MoS2 van der Waals Dimers-Reference-Cited by-同舟云学术

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Thermal History-Dependent Current Relaxation in hBN/MoS2 van der Waals Dimers

Published:2020-04-20 Issue:5 Volume:14 Page:5909-5916
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Ahmed Tanweer¹^ORCID,Bellare Pavithra²,Debnath Rahul¹,Roy Ahin²^ORCID,Ravishankar Narayanan²^ORCID,Ghosh Arindam¹³

Affiliation:

1. Department of Physics, Indian Institute of Science, Bangalore 560012, India

2. Materials Research Centre, Indian Institute of Science, Bangalore 560012, India

3. Centre for Nano Science and Engineering, Indian Institute of Science, Bangalore 560012, India

Funder

DRDO, Govt. of India

DST, Govt. of India

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.0c01079

Reference61 articles.

1. Two-dimensional gas of massless Dirac fermions in graphene

2. Measurement of the Elastic Properties and Intrinsic Strength of Monolayer Graphene

3. Single-layer MoS2 transistors

4. Tightly bound trions in monolayer MoS2

5. Van der Waals heterostructures

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1. Analysis of current distribution for hexagonal antenna and compare with rectangular microstrip patch antenna at 2.4 GHz;AIP Conference Proceedings;2024

2. Monolayer Graphene–MoSSe van der Waals Heterostructure for Highly Responsive Gate-Tunable Near-Infrared-Sensitive Broadband Fast Photodetector;ACS Applied Materials & Interfaces;2023-03-07

3. High‐Efficiency Infrared Sensing with Optically Excited Graphene‐Transition Metal Dichalcogenide Heterostructures;Small;2022-07-08

4. Growth of highly conducting MoS2-xNx thin films with enhanced 1T' phase by pulsed laser deposition and exploration of their nanogenerator application;iScience;2022-03

5. Influence of the hBN Dielectric Layers on the Quantum Transport Properties of MoS2 Transistors;Materials;2022-01-29

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