Hot-Hole versus Hot-Electron Transport at Cu/GaN Heterojunction Interfaces-Reference-Cited by-同舟云学术

Hot-Hole versus Hot-Electron Transport at Cu/GaN Heterojunction Interfaces

Published:2020-04-14 Issue:5 Volume:14 Page:5788-5797
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Tagliabue Giulia¹²^ORCID,DuChene Joseph S.¹^ORCID,Habib Adela³,Sundararaman Ravishankar³^ORCID,Atwater Harry A.¹^ORCID

Affiliation:

1. Thomas J. Watson Laboratory of Applied Physics and Joint Center for Artificial Photosynthesis, California Institute of Technology, Pasadena, California 91125 United States

2. Laboratory of Nanoscience for Energy Technologies (LNET), EPFL, 1015 Lausanne, Switzerland

3. Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180, United States

Funder

Rensselaer Polytechnic Institute

U.S. Department of Energy

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.0c00713

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