Optoelectronic Application of the 3C-Silicon Carbide with Substitutional VIII-Group Atoms
Author:
Affiliation:
1. Instituto de Energía Solar, E.T.S.I. de Telecomunicación, Universidad Politécnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid, Spain
Publisher
American Chemical Society (ACS)
Subject
Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/jp4074015
Reference41 articles.
1. Current SiC technology for power electronic devices beyond Si
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4. Calculation of the Energy Band Structure of the β-SiC Crystal by the Orthogonalized Plane Wave Method
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