Unique Carbon-Nanotube Field-Effect Transistors with Asymmetric Source and Drain Contacts-Reference-Cited by-同舟云学术

Unique Carbon-Nanotube Field-Effect Transistors with Asymmetric Source and Drain Contacts

Published:2007-12-11 Issue:1 Volume:8 Page:64-68
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Li Hong¹,Zhang Qing¹,Marzari Nicola¹

Affiliation:

1. Microelectronics Center, School of Electrical and Electronics Engineering, Nanyang Technological University, S1-B2c-20, Singapore 639798, and Department of Materials Science and Engineering, 13-5066 MIT, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139-4307

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl071905e

Reference31 articles.

1. Carbon nanotube electronics

2. Molecular Electronics with Carbon Nanotubes

3. Room-temperature transistor based on a single carbon nanotube

4. Nanotube Molecular Wires as Chemical Sensors

5. Single-Walled Carbon Nanotube Based Real-Time Organophosphate Detector

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