Nondestructive Monitoring of Defect Evolution in Epitaxial CdTe Thin Layers Grown on Si(111)-Reference-Cited by-同舟云学术

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Nondestructive Monitoring of Defect Evolution in Epitaxial CdTe Thin Layers Grown on Si(111)

Published:2014-01-17 Issue:4 Volume:118 Page:1968-1973
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Oliveira J. M.¹,Malachias A.²,Ospina C. A.³,Ferreira S. O.¹

Affiliation:

1. Departamento de Física, Universidade Federal de Viçosa, Viçosa, MG, Brazil

2. Departamento de Física, Universidade Federal de Minas Gerais, Belo Horizonte, MG, Brazil

3. Laboratório Nacional de Nanotecnologia, Centro Nacional de Pesquisa em Energia e Materiais, Campinas, SP, Brazil

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp409538p

Reference22 articles.

1. MOVPE Growth of CdTe on Si Substrates for Gamma Ray Detector Fabrication

2. High-efficiency polycrystalline CdTe thin-film solar cells

3. Implications of the Negative Capacitance Observed at Forward Bias in Nanocomposite and Polycrystalline Solar Cells

4. Quantum Dot Sensitized Solar Cells. A Tale of Two Semiconductor Nanocrystals: CdSe and CdTe

5. MBE HgCdTe on Si and GaAs substrates

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1. Localized-states quantum confinement induced by roughness in CdMnTe/CdTe heterostructures grown on Si(111) substrates;Journal of Semiconductors;2024-09-01

2. Enhanced performance of Se-alloyed CdTe solar cells: The role of Se-segregation on the grain boundaries;Journal of Applied Physics;2021-01-14

3. Retrieving the configuration of grain boundary structure in polycrystalline materials by extraordinary X-ray reflection analysis;Journal of Applied Crystallography;2020-07-16

4. Passivating Grain Boundaries in Polycrystalline CdTe;The Journal of Physical Chemistry C;2019-09-12

5. Electronic properties of low- Σ grain boundaries in InAs;Physical Review Materials;2018-12-27

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