A Combined NMR and DFT Study of Narrow Gap Semiconductors: The Case of PbTe-Reference-Cited by-同舟云学术

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A Combined NMR and DFT Study of Narrow Gap Semiconductors: The Case of PbTe

Published:2013-04-22 Issue:17 Volume:117 Page:8959-8967
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Taylor Robert E.¹,Alkan Fahri²,Koumoulis Dimitrios¹,Lake Michael P.¹,King Daniel¹,Dybowski Cecil²,Bouchard Louis-S.¹³

Affiliation:

1. Department of Chemistry and Biochemistry, University of California, Los Angeles, California 90095-1569, United States

2. Department of Chemistry and Biochemistry, University of Delaware, Newark, Delaware 19761-2522, United States

3. California NanoSystems Institute, UCLA, Los Angeles, California 90095-1569, United States

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp3101877

Reference66 articles.

1. Lead telluride alloy thermoelectrics

2. Knight Shifts and Band Structure in the Lead-Salt Semiconductors

3. Knight Shift in Multivalley Semiconductors. I. Theory of Contact, Orbital, and Dipolar Shift and Relativistic Effects

4. Knight Shift in Multivalley Semiconductors. II. Determination of the Hyperfine Coupling Constants inN-andP-Type PbSe and PbTe

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