Electrical Spin Injection into InN Semiconductor Nanowires-Reference-Cited by-同舟云学术

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Electrical Spin Injection into InN Semiconductor Nanowires

Published:2012-08-21 Issue:9 Volume:12 Page:4437-4443
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Heedt S.¹,Morgan C.²,Weis K.¹,Bürgler D. E.²,Calarco R.¹,Hardtdegen H.¹,Grützmacher D.¹,Schäpers Th.¹³

Affiliation:

1. Peter Grünberg Institut (PGI-9) and JARA-Fundamentals of Future Information Technology, Forschungszentrum Jülich, 52425 Jülich, Germany

2. Peter Grünberg Institut (PGI-6) and JARA-Fundamentals of Future Information Technology, Forschungszentrum Jülich, 52425 Jülich, Germany

3. II. Physikalisches Institut, RWTH Aachen University, 52056 Aachen, Germany

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl301052g

Reference54 articles.

1. Suppression of Spin Relaxation in Submicron InGaAs Wires

2. Suppression of weak antilocalization inGaxIn1−xAs∕InPnarrow quantum wires

3. Electrical creation of spin polarization in silicon at room temperature

4. Electrical spin injection and accumulation at room temperature in an all-metal mesoscopic spin valve

5. Electric Field Control of Magnetoresistance in InP Nanowires with Ferromagnetic Contacts

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