Diamond Nucleation on Hexagonal Boron Nitride: A Theoretical Investigation of the Influence of CH3 and Na Substituents-Reference-Cited by-同舟云学术

Diamond Nucleation on Hexagonal Boron Nitride: A Theoretical Investigation of the Influence of CH3 and Na Substituents

Published:1998-07-01 Issue:30 Volume:102 Page:5866-5869
ISSN:1520-6106
Container-title:The Journal of Physical Chemistry B
language:en
Short-container-title:J. Phys. Chem. B

Author:

Carbone M.¹,Larsson K.¹,Carlsson J.-O.¹

Affiliation:

1. Department of Chemical Science and Technologies, University “Tor Vergata”, Via della Ricerca Scientifica 1, 00133 Rome, Italy, and Department of Inorganic Chemistry, The Angstrom Laboratory, Box 538, S-751 21 Uppsala, Sweden

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Surfaces, Coatings and Films,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/jp981289y

Reference33 articles.

1. Growth and Characterization of Diamond Thin Films

2. Diamond grown on single‐crystal beryllium oxide

3. On epitaxial growth of diamond films on (100) silicon substrates

4. Characterization of diamond thin films: Diamond phase identification, surface morphology, and defect structures

5. Oriented cubic nucleations and local epitaxy during diamond growth on silicon {100} substrates

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