Excited State Properties of Allylamine-Capped Silicon Quantum Dots-Reference-Cited by-同舟云学术

Excited State Properties of Allylamine-Capped Silicon Quantum Dots

Published:2007-01-24 Issue:6 Volume:111 Page:2394-2400
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Wang X.¹,Zhang ¹,Niehaus ¹,Frauenheim Th.¹

Affiliation:

1. Centre of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, China, Bremen Center for Computational Material Science, University of Bremen, 28334 Bremen, Germany, and German Cancer Research Center, Department of Molecular Biophysics, D-69120 Heidelberg, Germany

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp065704v

Reference31 articles.

1. Organometallic Chemistry on Silicon and Germanium Surfaces

2. Chelikowsky, J. R.; Kronik, L.; Vasiliev, I.J. Phys. Condens. Matter2003,15, R1517.

3. Computational Studies of the Optical Emission of Silicon Nanocrystals

4. Optical Properties of Silicon Clusters in the Presence of Water: A First Principles Theoretical Analysis

5. Observation of strong direct-like oscillator strength in the photoluminescence of Si nanoparticles

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