Transport Property and Charge Trap Comparison for N-Channel Perylene Diimide Transistors with Different Air-Stability-Reference-Cited by-同舟云学术

Transport Property and Charge Trap Comparison for N-Channel Perylene Diimide Transistors with Different Air-Stability

Published:2010-08-17 Issue:48 Volume:114 Page:20387-20393
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Barra M.¹,Girolamo F. V. Di¹,Chiarella F.¹,Salluzzo M.¹,Chen Z.¹,Facchetti A.¹,Anderson L.¹,Cassinese A.¹

Affiliation:

1. CNR-SPIN and Department of Physics Science, University of Naples Federico II, Piazzale Tecchio 80125, Naples, Italy, Polyera Corporation, 8045 Lamon Avenue, Skokie, Illinois 60077, Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston Illinois 60208, Electronic Materials Research Lab, School of Engineering and Physical Sciences, James Cook University, Townsville QLD 4811, Australia

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp103555x

Reference99 articles.

1. Materials and Applications for Large Area Electronics: Solution-Based Approaches

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4. High Electron Mobility in Vacuum and Ambient for PDIF-CN2 Single-Crystal Transistors

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