Anisotropic Diffusion of In Atoms from an In Droplet and Formation of Elliptically Shaped InAs Quantum Dot Clusters on (100) GaAs
Author:
Affiliation:
1. National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki, 305-0047, Japan
2. Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511, Japan
Publisher
American Chemical Society (ACS)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/cg101210d
Reference15 articles.
1. New MBE growth method for InSb quantum well boxes
2. Growth of GaAs Epitaxial Microcrystals on an S-Terminated GaAs Substrate by Successive Irradiation of Ga and As Molecular Beams
3. Fabrication of GaAs Quantum Dots by Modified Droplet Epitaxy
4. Photoluminescence studies of GaAs quantum dots grown by droplet epitaxy
5. Nanometer-scale GaAs ring structure grown by droplet epitaxy
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