Domains and Topological Defects in Layered Ferrielectric Materials: Implications for Nanoelectronics-Reference-Cited by-同舟云学术

Domains and Topological Defects in Layered Ferrielectric Materials: Implications for Nanoelectronics

Published:2020-07-07 Issue:8 Volume:3 Page:8161-8166
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

Vasudevan Rama K.¹^ORCID,Neumayer Sabine M.¹^ORCID,Susner Michael A.²^ORCID,McGuire Michael A.³^ORCID,Pantelides Sokrates T.⁴^ORCID,Maksymovych Petro¹,Leonard Donovan N.³,Balke Nina¹^ORCID,Borisevich Albina Y.¹^ORCID

Affiliation:

1. Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830, United States

2. Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, Ohio, United States

3. Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee United States

4. Department of Physics and Astronomy and Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, Tennessee 37235, United States

Funder

Basic Energy Sciences

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsanm.0c01577

Reference39 articles.

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