Nanometer-Thick Hexagonal Boron Nitride Films for 2D Field-Effect Transistors-Reference-Cited by-同舟云学术

Nanometer-Thick Hexagonal Boron Nitride Films for 2D Field-Effect Transistors

Published:2020-07-29 Issue:8 Volume:3 Page:7930-7941
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

Gupta Siddharth¹²^ORCID,Sachan Ritesh³^ORCID,Narayan Jagdish¹

Affiliation:

1. Department of Materials Science and Engineering, North Carolina State University, Centennial Campus, Raleigh, North Carolina 27695-7907, United States

2. Intel Corporation, Ronler Acres Campus 3, Hillsboro, Oregon 97124, United States

3. School of Mechanical and Aerospace Engineering, Oklahoma State University, Stillwater, Oklahoma 74078, United States

Funder

Division of Materials Research

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsanm.0c01416

Reference54 articles.

1. Ultrathin high-temperature oxidation-resistant coatings of hexagonal boron nitride

2. Boron nitride nanotube reinforced hydroxyapatite composite: Mechanical and tribological performance and in-vitro biocompatibility to osteoblasts

3. Boron nitride substrates for high-quality graphene electronics

4. Local Electronic Properties of Graphene on a BN Substrate via Scanning Tunneling Microscopy

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