Optimization of CIGS-Based PV Device through Antimony Doping
Author:
Affiliation:
1. IBM T. J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598
2. IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,General Chemical Engineering,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/cm903428f
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