High-Mobility Hydrogenated Fluorine-Doped Indium Oxide Film for Passivating Contacts c-Si Solar Cells

Author:

Han Can123ORCID,Mazzarella Luana1,Zhao Yifeng1,Yang Guangtao1,Procel Paul1,Tijssen Martijn1,Montes Ana1,Spitaleri Luca4,Gulino Antonino4,Zhang Xiaodan2ORCID,Isabella Olindo1,Zeman Miro1

Affiliation:

1. Photovoltaic Materials and Devices Group, Delft University of Technology, 2628 CD Delft, The Netherlands

2. Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin 300350, China

3. Shenzhen Institute of Wide-Bandgap Semiconductors, Shenzhen 518055, China

4. Department of Chemical Sciences, University of Catania, 95124 Catania, Italy

Funder

Ministry of Education of the People's Republic of China

Ministry of Science and Technology of the People's Republic of China

Tianjin Science and Technology Committee

National Natural Science Foundation of China

Shenzhen Institute of Wide-bandgap Semiconductors

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

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