Highly Monochromatic Electron Emission from Graphene/Hexagonal Boron Nitride/Si Heterostructure-Reference-Cited by-同舟云学术

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Highly Monochromatic Electron Emission from Graphene/Hexagonal Boron Nitride/Si Heterostructure

Published:2019-12-27 Issue:3 Volume:12 Page:4061-4067
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Murakami Katsuhisa¹²^ORCID,Igari Tomoya¹²,Mitsuishi Kazutaka³,Nagao Masayoshi¹,Sasaki Masahiro²,Yamada Yoichi²^ORCID

Affiliation:

1. National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan

2. Faculty of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan

3. National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan

Funder

Ministry of Education, Culture, Sports, Science and Technology

Nanotech CUPAL

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.9b17468

Reference51 articles.

1. Emission characteristics of metal–oxide–semiconductor electron tunneling cathode

2. Energy distribution of tunneling emission from Si-gate metal–oxide–semiconductor cathode

3. Experiments of highly emissive metal–oxide–semiconductor electron tunneling cathode

4. Resonant Fowler–Nordheim tunneling emission from metal-oxide-semiconductor cathodes

5. Vacuum-ultraviolet light emission from xenon directly excited by ballistic output electrons of nanocrystalline silicon planar cathode

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1. Electron Emission Properties of Planar-Type Electron Emission Devices Based on A Graphene/h-BN/Si Heterostructure Fabricated by Inductively Coupled Plasma-Enhanced Chemical Vapor Deposition;2024 37th International Vacuum Nanoelectronics Conference (IVNC);2024-07-15

2. Narrow Energy Spread Electron Emission from Si-Tip with Ultra-Thin Diamond Like Carbon Coating;2024 37th International Vacuum Nanoelectronics Conference (IVNC);2024-07-15

3. Modulation and Optoelectronic Applications of van der Waals Interlayer Excitons;ACS Photonics;2024-06-29

4. Tunable Electron Emission From Back-Gated SiO_x Tunneling Diodes for Addressable Devices;IEEE Transactions on Electron Devices;2024-01

5. Concept for a fractional energy barrier tunneling junction;Applied Physics Letters;2023-12-11

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