Impact of Etch Processes on the Chemistry and Surface States of the Topological Insulator Bi2Se3-Reference-Cited by-同舟云学术

Impact of Etch Processes on the Chemistry and Surface States of the Topological Insulator Bi2Se3

Published:2019-08-16 Issue:35 Volume:11 Page:32144-32150
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Barton Adam T.¹,Walsh Lee A.¹²^ORCID,Smyth Christopher M.¹,Qin Xiaoye¹,Addou Rafik¹,Cormier Christopher¹,Hurley Paul K.²,Wallace Robert M.¹^ORCID,Hinkle Christopher L.¹³^ORCID

Affiliation:

1. Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080, United States

2. Tyndall National Institute, University College Cork, Lee Maltings Complex, Cork T12R5CP, Ireland

3. Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, United States

Funder

Science Foundation Ireland

National Institute of Standards and Technology

H2020 Marie Sklodowska-Curie Actions

Division of Electrical, Communications and Cyber Systems

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.9b10625

Reference29 articles.

1. The next generation

2. Colloquium: Topological insulators

3. The birth of topological insulators

4. van der Waals epitaxy: 2D materials and topological insulators

5. Topological Insulators in Three Dimensions

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