Effect of Interfacial Roughness Spin Scattering on the Spin Current Transport in YIG/NiO/Pt Heterostructures
Author:
Affiliation:
1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
2. Zhejiang Hikstor Technology Co., Ltd., Hangzhou, 310000, China
Funder
Ministry of Science and Technology of the People's Republic of China
National Natural Science Foundation of China
Sichuan Science and Technology Support Project
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.9b12125
Reference41 articles.
1. Current-induced switching in a magnetic insulator
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5. Observation of the spin-Seebeck effect in a ferromagnetic semiconductor
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