Field-Free Spin–Orbit Torque Switching of Perpendicular Magnetization by the Rashba Interface-Reference-Cited by-同舟云学术

Field-Free Spin–Orbit Torque Switching of Perpendicular Magnetization by the Rashba Interface

Published:2019-10-11 Issue:42 Volume:11 Page:39369-39375
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Cui Baoshan¹²,Wu Hao¹,Li Dong³,Razavi Seyed Armin¹,Wu Di¹,Wong Kin L.¹,Chang Meixia²,Gao Meizhen²,Zuo Yalu²,Xi Li²^ORCID,Wang Kang L.¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, University of California, Los Angeles, California 90095, United States

2. Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education & School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, P. R. China

3. Research Institute of Materials Science, Shanxi Normal University, Linfen 041004, P. R. China

Funder

Ministry of Education of the People's Republic of China

Basic Energy Sciences

Division of Engineering Education and Centers

Division of Electrical, Communications and Cyber Systems

National Natural Science Foundation of China

Natural Science Foundation of Gansu Province

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.9b13622

Reference44 articles.

1. Perpendicular switching of a single ferromagnetic layer induced by in-plane current injection

2. Spin-Torque Switching with the Giant Spin Hall Effect of Tantalum

3. Current-Induced Switching of Perpendicularly Magnetized Magnetic Layers Using Spin Torque from the Spin Hall Effect

4. Layer thickness dependence of the current-induced effective field vector in Ta|CoFeB|MgO

5. Magnetization switching through giant spin–orbit torque in a magnetically doped topological insulator heterostructure

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